635 nm 20 mW DFB laser
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Abstract
The shortest wavelength room temperature operation in an electrically pumped DFB laser is demonstrated. The InGaAlP device emits up to 20 mW in a single spatial and longitudinal mode under CW conditions. Such lasers can substitute for bulky He-Ne gas lasers for meteorological and spectroscopic applications.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">635 nm 20 mW DFB laser</title><author><name sortKey="Pezeshki, B" uniqKey="Pezeshki B">B. Pezeshki</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>SDL Inc</s1><s2>San Jose CA</s2><s3>USA</s3><sZ>1 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Dakota du Sud</region></placeName></affiliation></author><author><name sortKey="Zelinski, M" uniqKey="Zelinski M">M. Zelinski</name></author><author><name sortKey="Agrawal, V" uniqKey="Agrawal V">V. Agrawal</name></author></titleStmt><publicationStmt><idno type="inist">98-0338474</idno><date when="1998">1998</date><idno type="stanalyst">PASCAL 98-0338474 EI</idno><idno type="RBID">Pascal:98-0338474</idno><idno type="wicri:Area/Main/Corpus">016B30</idno><idno type="wicri:Area/Main/Repository">017715</idno></publicationStmt><seriesStmt><idno type="ISSN">0013-5194</idno><title level="j" type="abbreviated">Electron Lett</title><title level="j" type="main">Electronics Letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Distributed feedback lasers</term><term>Laser modes</term><term>Longitudinal mode</term><term>Semiconducting indium phosphide</term><term>Semiconductor device manufacture</term><term>Semiconductor device structures</term><term>Single spatial mode</term><term>Theory</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Théorie</term><term>Indium phosphure semiconducteur</term><term>Mode laser</term><term>Fabrication dispositif semiconducteur</term><term>Structure dispositif semiconducteur</term><term>Laser réaction répartie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The shortest wavelength room temperature operation in an electrically pumped DFB laser is demonstrated. The InGaAlP device emits up to 20 mW in a single spatial and longitudinal mode under CW conditions. Such lasers can substitute for bulky He-Ne gas lasers for meteorological and spectroscopic applications.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0013-5194</s0></fA01><fA02 i1="01"><s0>ELLEAK</s0></fA02><fA03 i2="1"><s0>Electron Lett</s0></fA03><fA05><s2>34</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>635 nm 20 mW DFB laser</s1></fA08><fA11 i1="01" i2="1"><s1>PEZESHKI (B.)</s1></fA11><fA11 i1="02" i2="1"><s1>ZELINSKI (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>AGRAWAL (V.)</s1></fA11><fA14 i1="01"><s1>SDL Inc</s1><s2>San Jose CA</s2><s3>USA</s3><sZ>1 aut.</sZ></fA14><fA20><s1>987-988</s1></fA20><fA21><s1>1998</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>12270</s2></fA43><fA44><s0>A100</s0></fA44><fA45><s0>6 Refs.</s0></fA45><fA47 i1="01" i2="1"><s0>98-0338474</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Electronics Letters</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The shortest wavelength room temperature operation in an electrically pumped DFB laser is demonstrated. The InGaAlP device emits up to 20 mW in a single spatial and longitudinal mode under CW conditions. Such lasers can substitute for bulky He-Ne gas lasers for meteorological and spectroscopic applications.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55A</s0></fC02><fC02 i1="02" i2="X"><s0>001D03C</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F</s0></fC02><fC03 i1="01" i2="1" l="ENG"><s0>Single spatial mode</s0><s4>INC</s4></fC03><fC03 i1="02" i2="1" l="ENG"><s0>Longitudinal mode</s0><s4>INC</s4></fC03><fC03 i1="03" i2="1" l="FRE"><s0>Théorie</s0></fC03><fC03 i1="03" i2="1" l="ENG"><s0>Theory</s0></fC03><fC03 i1="04" i2="1" l="FRE"><s0>Indium phosphure semiconducteur</s0></fC03><fC03 i1="04" i2="1" l="ENG"><s0>Semiconducting indium phosphide</s0></fC03><fC03 i1="05" i2="1" l="FRE"><s0>Mode laser</s0></fC03><fC03 i1="05" i2="1" l="ENG"><s0>Laser modes</s0></fC03><fC03 i1="06" i2="1" l="FRE"><s0>Fabrication dispositif semiconducteur</s0></fC03><fC03 i1="06" i2="1" l="ENG"><s0>Semiconductor device manufacture</s0></fC03><fC03 i1="07" i2="1" l="FRE"><s0>Structure dispositif semiconducteur</s0></fC03><fC03 i1="07" i2="1" l="ENG"><s0>Semiconductor device structures</s0></fC03><fC03 i1="08" i2="1" l="FRE"><s0>Laser réaction répartie</s0><s3>P</s3></fC03><fC03 i1="08" i2="1" l="ENG"><s0>Distributed feedback lasers</s0><s3>P</s3></fC03><fN21><s1>222</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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